Influence of Different Seed Crystals on the Quality of Polycrystalline Silicon Ingot
Author of the article:ZHANG Ting;WANG Feng;HOU Weiqiang;BAI Xiang;ZHAO Yufei;FU Zhuang
Author's Workplace：CETC New Energy Technology Co.,Ltd.,Taiyuan 030000,China
Key Words：polycrystalline silicon ingot seed crystal minority carriers lifetime dislocationpolycrystalline silicon ingot seed crystal minority carriers lifetime dislocation
Abstract：
The seed crystals used were primary polysilicon materials of different types. One was primary polysilicon particles with particle size of 2~5 mm. The other was the original polycrystalline plate with a thickness of about 2 cm. The two were laid at the bottom of the same crucible, and each took half. Thus, the growth environment, technological formula and other factors affecting the long crystal of the two seed crystals were completely consistent, which was conducive to the better comparison and analysis of the influence of different seed crystals on the quality of silicon ingots. The results show that the grain size, grain uniformity, minor particle life and infrared flaw detection of silicon ingots produced by the two seed crystals are compared. The advantages and disadvantages of the two kinds of seed crystals are compared and analyzed,and it is found that the seed crystals made of primary polycrystalline silicon with particle size of 2~5 mm has better crystal inducing effect.
