Preparation of a Broadband Ag2 Se Film Photothermoelectric Detector via a Room-temperature Selenization Method
Author of the article: ZHOUJiamin1, WANG Zegao1, ZHOU Chongjian2,3, YANG Lei1
Author's Workplace:1. School of Materials Science and Engineering, Sichuan University, Chengdu 610065, China; 2. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; 3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
Key Words:Ag2 Se; anneal; photothermoelectric effect; broadband detection
Abstract:
Broadband photodetectors are widely applied in many fields, including imaging and optical communication, and
can be achieved via many strategies, such as the photothermoelectric effect. Ag2
Se has excellent thermoelectric properties
and photothermal conversion abilities, showing great potential in broadband photothermoelectric detection. In this
study, Ag2
Se films with controlled thicknesses were synthesized via ion sputtering and a solution-based selenization
process, and recrystallization was then induced through annealing to optimize the thermoelectric properties. The
as-assembled Ag2
Se-based detectors exhibit broadband photoresponses from ultraviolet (370 nm) to near-infrared (1 550 nm)
wavelengths, and the maximum response and the responsivity (Rv
) under 1 550 nm illumination reach 2.8 mV
and 106.3 mV/W, respectively. This broadband response ability originates from the independence of the nonradiative
process after the absorption of photons on the bandgap.