Group II-VI multicomponent (ternary and more than ternary) compound semiconductor crystals are a very important class of optoelectronic materials. Most of them are sphalerite structures with direct transition type band gaps. Then-type or p-type semiconductor crystal materials can be obtained by doping with different impurities. These crystals have the characteristics of a large atomic number, high resistivity, large carrier mobility lifetime product, good light absorption coefficient, etc., and can be used in room temperature radiation detectors, solar cells, Faraday magnetic devices and other fields. In this paper, the structure and physical properties of group II-VI multicomponent compound semiconductor crystals are introduced, and the research progress of crystal growth is reviewed in combination with growth methods. The main applications of the devices are analysed and discussed, and the future development direction of this class of crystal materials is proposed.