Research and Application Analysis of Six-side Heating Technology for Polycrystalline Silicon Ingot 在线阅读 下载PDF
Author of the article:XIA Xinzhong;LIU Lei;QIN Fangna;SONG Dengyuan;SHI Jinchao;MENG Qingchao
Author's Workplace：State Key Laboratory of Photovoltaic Materials and Technology,Baoding 071051,China;Yingli Energy(China)Co.,Ltd.,Baoding 071051,China;Hebei Likang Engineering Technology Co.,Ltd.,Baoding 071051,China
Key Words：thermal field modeling temperature difference directional growth interface heater
Abstract：As the core component of the polycrystalline ingot casting furnace, the heater provides heat for the melting of silicon and the oriented growth of crystals. However, with the continuous expansion of the polycrystalline ingot furnace size, the traditional five-sided heating method has been unable to effectively meet the heat supply at each stage. The increase of the transverse temperature difference affects the vertical growth of grain, which makes the battery efficiency decrease and energy consumption increase. The six-side heating technology is to add the bottom heater on the basis of the traditional five-side heating, and each heater is separately controlled. Through the thermal field modeling and the use of CGSim simulation software, the differences and advantages of the six-side heating compared with the five-side heating are simulated and analyzed, and the actual production and application effects are compared with the mono-crystal as an example.
