Recent Progress of Metal Oxide RRAM

Author of the article:ZHANG Jiaojiao1 , ZHOU Long1 , WANG Hongqiang2 , DONG Guangzhi1 , FAN Huiqing2

Author's Workplace：1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China; 2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China

Key Words：metal oxide; resistive random-access memory; information storage; brain-inspired computing

Abstract：With the development of integrated circuit technology, the size of semiconductor devices has gradually approached the limit of Moore's law. The current mainstream nonvolatile memory devices have been unable to satisfy the demand of information technology for ultrahigh density fast storage. Resistive random-access memory (RRAM) is considered to be the new star for the next generation of nonvolatile memory due to its simple structure, fast working speed, strong miniaturization, and compatibility with the CMOS process. Metal oxide-based RRAM has important applications in information storage and brain-inspired computing owing to its excellent performance and stability. In this paper, the recent progress of oxide-based resistive memory is systematically summarized in terms of materials, electrode materials, memory mechanism, and device performance, which provides a new idea for the development of oxide-based resistive memory.